| 2D heterostructure | 3.1.3.7 |
| 2D in-plane heterostructure | 3.1.3.9 |
| 2D material | 3.1.1.1 |
| 2D vertical heterostructure | 3.1.3.8 |
| 2LG | 3.1.2.7 |
| 3LG | 3.1.2.10 |
| AB stacking | 3.4.1.12 |
| ABC stacking | 3.4.1.13 |
| AES | 3.3.2.1 |
| AFM | 3.3.1.2 |
| alcohol precursor growth | 3.2.1.12 |
| ALD | 3.2.1.23 |
| alignment | 3.4.1.11 |
| angle resolved photoemission spectroscopy | 3.3.3.5 |
| anodic bonding | 3.2.1.14 |
| anomalous quantum Hall effect | 3.4.3.2 |
| ARPES | 3.3.3.5 |
| atomic force microscopy | 3.3.1.2 |
| atomic layer deposition | 3.2.1.23 |
| Auger electron spectroscopy | 3.3.2.1 |
| based | 3.1.1.19 |
| Bernal stacking | 3.4.1.12 |
| BET method | 3.3.1.11 |
| bilayer graphene | 3.1.2.7 |
| bottom up production | 3.2.1.2 |
| bottom-up precursor growth | 3.2.2.4 |
| Brunauer–Emmett–Teller method | 3.3.1.11 |
| buffer layer | 3.4.1.19 |
| carbon nanotube unzipping | 3.2.2.1 |
| chemical doping | 3.4.2.4 |
| chemical synthesis | 3.2.1.11 |
| chemical vapour deposition | 3.2.1.3 |
| CVD | 3.2.1.3 |
| defect | 3.4.1.1 |
| detonation | 3.2.1.25 |
| dislocation defect | 3.4.1.9 |
| domain size | 3.4.1.17 |
| doping | 3.4.2.3 |
| eddy current measurement | 3.3.3.9 |
| EDS | 3.3.2.4 |
| EDX | 3.3.2.4 |
| EELS | 3.3.2.3 |
| electrochemical doping | 3.4.2.5 |
| electrochemical exfoliation | 3.2.1.18 |
| electron beam lithographic patterning | 3.2.2.5 |
| electron energy loss spectroscopy | 3.3.2.3 |
| enabled | 3.1.1.16 |
| energy-dispersive X-ray spectroscopy | 3.3.2.4 |
| enhanced | 3.1.1.10 |
| epitaxial graphene | 3.1.2.6 |
| exfoliation via chemical intercalation | 3.2.1.17 |
| few-layer graphene | 3.1.2.11 |
| flake | 3.1.1.3 |
| flake size | 3.4.1.18 |
| FLG | 3.1.2.11 |
| four point probe method | 3.3.3.1 |
| four-terminal sensing | 3.3.3.1 |
| fractional quantum Hall effect | 3.4.3.3 |
| functionalization | 3.1.2.17 |
| functionalized GNPs | 3.1.2.18 |
| functionalized graphene nanoplatelets | 3.1.2.18 |
| gas phase synthesis | 3.2.1.22 |
| germanene | 3.1.3.4 |
| GNP | 3.1.2.12 |
| GO | 3.1.2.15 |
| GR2M | 3.1.1.2 |
| GR2M-based | 3.1.1.21 |
| GR2M-enabled | 3.1.1.18 |
| GR2M-enhanced | 3.1.1.12 |
| GR2M-modified | 3.1.1.15 |
| grain boundary | 3.4.1.8 |
| graphane | 3.1.2.4 |
| graphene | 3.1.2.1 |
| graphene Hall bar setup | 3.3.3.2 |
| graphene layer | 3.1.2.1 |
| graphene nanoplatelet | 3.1.2.12 |
| graphene oxide | 3.1.2.15 |
| graphene precipitation | 3.2.1.10 |
| graphene-based | 3.1.1.20 |
| graphene-enabled | 3.1.1.17 |
| graphene-enhanced | 3.1.1.11 |
| graphene-modified | 3.1.1.14 |
| graphene-related 2D material | 3.1.1.2 |
| graphite | 3.1.2.2 |
| graphite oxidation | 3.2.1.19 |
| graphite oxide | 3.1.2.14 |
| growth on silicon carbide | 3.2.1.9 |
| hexagonal stacking | 3.4.1.12 |
| Hummers’ method | 3.2.1.20 |
| ICP-MS | 3.3.2.6 |
| inductively coupled plasma mass spectrometry | 3.3.2.6 |
| ion beam lithographic patterning | 3.2.2.6 |
| Kelvin-probe force microscopy | 3.3.3.3 |
| KPFM | 3.3.3.3 |
| laser ablation | 3.2.1.15 |
| lateral size | 3.4.1.18 |
| layer | 3.1.1.8 |
| LEED | 3.3.1.10 |
| LEEM | 3.3.1.9 |
| level of disorder | 3.4.1.10 |
| line defect | 3.4.1.5 |
| liquid-phase exfoliation | 3.2.1.8 |
| low energy electron diffraction | 3.3.1.10 |
| low energy electron microscopy | 3.3.1.9 |
| magic angle | 3.4.1.16 |
| MBE | 3.2.1.13 |
| mechanical exfoliation | 3.2.1.7 |
| metal organic chemical vapour deposition | 3.2.1.4 |
| MOCVD | 3.2.1.4 |
| modified | 3.1.1.13 |
| molecular beam epitaxy | 3.2.1.13 |
| monolayer graphene | 3.1.2.1 |
| MXene | 3.1.3.1 |
| nanofoil | 3.1.1.6 |
| nanographite | 3.1.2.3 |
| nanoplate | 3.1.1.5 |
| nanoribbon | 3.1.1.7 |
| nanosheet | 3.1.1.6 |
| nanotape | 3.1.1.7 |
| non-contact microwave method | 3.3.3.7 |
| oxygen content | 3.4.2.7 |
| PECVD | 3.2.1.5 |
| PEEM | 3.3.3.6 |
| perfluorographane | 3.1.2.5 |
| phosphorene | 3.1.3.6 |
| photoelectron emission microscopy | 3.3.3.6 |
| photoexfoliation | 3.2.1.16 |
| photoluminescence spectroscopy | 3.3.1.7 |
| PL spectroscopy | 3.3.1.7 |
| planar defect | 3.4.1.6 |
| plasma-enhanced chemical vapour deposition | 3.2.1.5 |
| point defect | 3.4.1.2 |
| pyrolysis | 3.2.1.24 |
| quantum dot | 3.1.1.9 |
| R2R production | 3.2.1.6 |
| Raman spectroscopy | 3.3.1.6 |
| reduced graphene oxide | 3.1.2.16 |
| rGO | 3.1.2.16 |
| rhombohedral stacking | 3.4.1.13 |
| roll-to-roll production | 3.2.1.6 |
| scanning electron microscopy | 3.3.1.4 |
| scanning tunnelling microscopy | 3.3.1.3 |
| scanning-probe microscopy | 3.3.1.1 |
| SEM | 3.3.1.4 |
| sheet | 3.1.1.4 |
| silicene | 3.1.3.3 |
| single-layer graphene | 3.1.2.1 |
| sp3 bonded adatom defect | 3.4.1.7 |
| SPM | 3.3.1.1 |
| stacking angle | 3.4.1.14 |
| stanene | 3.1.3.5 |
| STM | 3.3.1.3 |
| Stone-Wales defect | 3.4.1.20 |
| substitution defect | 3.4.1.4 |
| substrate induced doping | 3.4.2.6 |
| substrate interference effects | 3.4.3.1 |
| surface contamination | 3.4.2.1 |
| t(n+m)LG | 3.1.2.9 |
| t2LG | 3.1.2.8 |
| tBLG | 3.1.2.8 |
| TEM | 3.3.1.5 |
| templated CVD growth | 3.2.2.3 |
| templated growth on SiC | 3.2.2.2 |
| terahertz time-domain spectroscopy | 3.3.3.8 |
| tFLG particle | 3.1.2.13 |
| tg | 3.3.2.5 |
| thermal exfoliation of graphite oxide | 3.2.1.21 |
| thermal gravimetry | 3.3.2.5 |
| THz-TDS | 3.3.3.8 |
| TMD | 3.1.3.2 |
| TMDC | 3.1.3.2 |
| top down production | 3.2.1.1 |
| transfer residue | 3.4.2.2 |
| transition metal dichalcogenide | 3.1.3.2 |
| transmission electron microscopy | 3.3.1.5 |
| trilayer graphene | 3.1.2.10 |
| turbostratic bilayer graphene | 3.1.2.8 |
| turbostratic few-layer graphene particle | 3.1.2.13 |
| turbostratic stacking | 3.4.1.15 |
| twisted bilayer graphene | 3.1.2.8 |
| twisted few-layer graphene | 3.1.2.9 |
| two-dimensional material | 3.1.1.1 |
| ultraviolet photoelectron spectroscopy | 3.3.3.4 |
| UPS | 3.3.3.4 |
| vacancy defect | 3.4.1.3 |
| XPS | 3.3.2.2 |
| X-ray diffraction | 3.3.1.8 |
| X-ray photoelectron spectroscopy | 3.3.2.2 |
| XRD | 3.3.1.8 |