ISO/TS 10798:2011 ナノテクノロジー—走査型電子顕微鏡およびエネルギー分散型X線分光分析を使用した単層カーボンナノチューブの特性化 | ページ 6

3.1.1

SEM

走査型電子顕微鏡

十分に焦点を絞った電子ビームで試料の表面を走査することにより、試料の拡大画像を生成する機器

注記 1:機器、SEM プロセス、およびさまざまなタイプの SEM の詳細については、参考文献 [16] を参照。

注記 2:従来の SEM は、熱電子放出によって電子源を生成するために加熱される W または LaB ₆材料で作られた電子源フィラメントを利用します。電子ビームプローブのサイズ ( d _p ) は 3 nm ～ 4 nm ですが、これは個々の SWCNT を分離するには十分ではありません。有用な分析範囲は通常 100,000 倍未満であり、非導電性材料ではかなり小さくなる可能性があります。従来の SEM は通常、高い加速電圧 (5 kV ～ 30 kV) で動作し、多くの場合サンプルをコーティングする必要があります。これらの SEM は EDX 分析に使用できます。

注記 3:電界放射型走査電子顕微鏡 (FESEM) は非常に細い陰極先端を備えており、非常に低い加速電圧 (0.5 kV ～ 5 kV) であっても、従来の SEM に比べてプローブの直径が小さくなります。 FESEM では、電子ビームプローブのサイズを 1 nm 以下にすることができ、有効な倍率範囲が 1 桁以上広がります。低加速電圧を使用することで、導電性コーティングを塗布せずに非導電性材料をイメージングできます。 FESEM は、高解像度 SEM (HRSEM) と呼ばれることもあります。これは EDX 分析にも使用でき、低加速電圧を使用する場合に優れた空間分解能を提供します。

注記 4:可変圧力 SEM (VPSEM) は、別のタイプの SEM でありwhere 試料の周囲の圧力を数 Pa から数百 Pa まで制御して、表面の帯電を排除し、試料への表面損傷を最小限に抑えることができます。現時点ではこの仕様の範囲外ですが、この方法は、生物組織または流体環境に存在する可能性のある SWCNT の将来の VPSEM 特性評価の基礎を提供するためにここに含まれています。この場合、EDX 分析は可能ですが、残留ガス中の電子ビーム散乱により、点分析の結果が試料スタブ全体からのスプリアス寄与によって汚染されることになります。

3.2.1

accelerating voltage

potential difference applied between the filament and the anode to accelerate the electrons emitted from the source

[SOURCE:ISO 23833:2006, definition 4.1]

3.2.2

analysis depth

maximum depth from which a defined fraction (e.g. 95% of the total) of the X-rays are emitted from the interaction volume after absorption

[SOURCE:ISO 23833:2006, definition 4.7.1.2]

3.2.3

analysis volume

volume from which a defined fraction (e.g. 95% of the total) of the X-rays are emitted after generation and absorption

[SOURCE:ISO 23833:2006, definition 4.7.1.3]

3.2.4

be

backscattered electron

electron ejected through the entrance surface of a sample by a backscattering process

Note 1 to entry: By convention, an electron ejected with an energy greater than 50 eV may be considered as a backscattered electron.

Note 2 to entry: Adapted from ISO 23833:2006.

3.2.5

BEI

backscattered electron image

scanning electron beam image in which a signal is derived from a dedicated backscattered electron detector (e.g. passive scintillator, solid-state diode, channel plate or negatively-biased Everhart-Thornley detector)

[SOURCE:ISO 23833:2006, definition 3.4.2]

3.2.6

coating artefact

undesirable modification of the sample structure and/or X-ray spectrum arising from the characteristics of the coating material and which may interfere with the interpretation of the true sample details

Note 1 to entry: Adapted from ISO 23833:2006.

3.2.7

EDS

energy dispersive X-ray spectrometer

device for determining X-ray intensity as a function of the energy of the radiation

[SOURCE:ISO 23833:2006, definition 3.6.4]

3.2.8

EDX

energy dispersive X-ray spectrometry

form of X-ray spectrometry in which the energy of the individual photons is measured and is used to build up a digital histogram representing the distribution of X-rays with energy

[SOURCE:ISO 23833:2006, definition 3.6.5]

3.2.9

EPMA

electron probe microanalysis

technique of spatially-resolved elemental analysis based upon electron-excited X-ray spectrometry with a focused electron probe and an electron interaction volume with micrometer to sub-micrometer dimensions

[SOURCE:ISO 23833:2006, definition 2.1]

3.2.10

point analysis

analysis obtained when the electron probe is placed at a single location and held there for the duration of the spectrometric measurement

[SOURCE:ISO 23833:2006, definition 3.4.10]

3.2.11

se

secondary electron

electron of a sample emitted as a result of inelastic scattering of the primary beam electron by loosely bound valence-level electrons of the sample

Note 1 to entry: Secondary electrons have conventionally energies less than 50 eV.

Note 2 to entry: Adapted from ISO 23833:2006.

3.2.12

SEI

secondary electron image

scanning electron beam image in which the signal is derived from a detector that selectively measures secondary electrons (electrons having less than 50 eV) and is not directly sensitive to backscattered electrons

[SOURCE:ISO 23833:2006, definition 3.4.11]

3.3.1

field sample

sample taken from the production lot or from the material that needs to be characterized

Note 1 to entry: Adapted from CEN/TS 15443:2006.

3.3.2

laboratory sample

sub-sample of a field sample having undergone certain sample preparation steps (e.g. drying, etc.) in a laboratory

Note 1 to entry: Adapted from CEN/TS 15443:2006.

3.3.3

analysis sample

sub-sample of a laboratory samplehaving a nominal size of a few millimetres, or a mass of tens of milligrams, used for a number of chemical and physical analyses

Note 1 to entry: Adapted from CEN/TS 15443:2006.

3.3.4

test portion

sub-sample of an analysis sample consisting of the quantity of material required for a single execution of a test method

Note 1 to entry: Adapted from CEN/TS 15443:2006.

3.3.5

test area

specific x-y area location on the test portion defined by the SEM magnification setting

Note 1 to entry: Adapted from CEN/TS 15443:2006.

3.3.6

sub-sample

portion of a sample

Note 1 to entry: Adapted from CEN/TS 15443:2006.